APTGT300A170D3G APTGT300A170D3G ? rev 2 march, 2011 www.microsemi.com 1-5 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1700 v t c = 25c 400 i c continuous collector current t c = 80c 300 i cm pulsed collector current t c = 25c 600 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 1470 w rbsoa reverse bias safe operating area t j = 125c 600a@1650v these devices are sensitiv e to electrostatic discharge. proper handling procedures should be followe d. see application note apt0502 on www.microsemi.com 2 1 3 5 q2 7 6 q1 4 v ces = 1700v i c = 300a @ tc = 80c application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? trench + field stop igbt3 technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? high level of integration ? m6 power connectors benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? rohs compliant phase leg trench + field stop igbt3 power module
APTGT300A170D3G APTGT300A170D3G ? rev 2 march, 2011 www.microsemi.com 2-5 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1700v 3 ma t j = 25c 2.0 2.5 v ce(on) collector emitter on voltage v ge = 15v i c = 300a t j = 125c 2.4 v v ge(th) gate threshold voltage v ge = v ce , i c = 12 ma 5.2 5.8 6.4 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 27 c res reverse transfer capacitance v ge = 0v, v ce = 25v f = 1mhz 0.9 nf q g gate charge v ge =15v, i c =300a v ce =900v 3.5 c t d(on) turn-on delay time 280 t r rise time 80 t d(off) turn-off delay time 850 t f fall time inductive switching (25c) v ge = 15v v bus = 900v i c = 300a r g = 4.7 120 ns t d(on) turn-on delay time 300 t r rise time 100 t d(off) turn-off delay time 1000 t f fall time inductive switching (125c) v ge = 15v v bus = 900v i c = 300a r g = 4.7 200 ns t j = 25c 71 e on turn on energy t j = 125c 105 t j = 25c 64 e off turn off energy v ge = 15v v bus = 900v i c = 300a r g = 4.7 t j = 125c 94 mj i sc short circuit data v ge 15v ; v bus = 1000v t p 10s ; t j = 125c 1200 a reverse diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1700 v t j = 25c 750 i rrm maximum reverse leakage current v r =1700v t j = 125c 1000 a i f dc forward current tc = 80c 300 a t j = 25c 1.8 2.2 v f diode forward voltage i f = 300a t j = 125c 1.9 v t j = 25c 385 t rr reverse recovery time t j = 125c 490 ns t j = 25c 76 q rr reverse recovery charge t j = 125c 124 c t j = 25c 35 e rr reverse recovery energy i f = 300a v r = 900v di/dt =3500a/s t j = 125c 70 mj
APTGT300A170D3G APTGT300A170D3G ? rev 2 march, 2011 www.microsemi.com 3-5 thermal and package characteristics symbol characteristic min typ max unit igbt 0.085 r thjc junction to case thermal resistance diode 0.13 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 125 c for terminals m6 3 5 torque mounting torque to heatsink m6 3 5 n.m wt package weight 350 g d3 package outline (dimensions in mm) 1 a dtail a
APTGT300A170D3G APTGT300A170D3G ? rev 2 march, 2011 www.microsemi.com 4-5 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 150 300 450 600 00.511.522.533.54 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =20v v ge =9v 0 100 200 300 400 500 600 012345 v ce (v) i c (a) t j = 125c transfert characteristics t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 567891011 v ge (v) i c (a) energy losses vs collector current eon eoff err 0 75 150 225 300 0 100 200 300 400 500 600 i c (a) e (mj) v ce = 900v v ge = 15v r g = 4.7 ? t j = 125c eon eoff err 0 100 200 300 400 0 5 10 15 20 25 30 35 gate resistance (ohms) e (mj) v ce = 900v v ge =15v i c = 300a t j = 125c switching energy losses vs gate resistance reverse bias safe operating area 0 100 200 300 400 500 600 700 0 400 800 1200 1600 2000 v ce (v) i c (a) v ge =15v t j =125c r g =4.7 ? maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) igbt
APTGT300A170D3G APTGT300A170D3G ? rev 2 march, 2011 www.microsemi.com 5-5 forward characteristic of diode t j =25c t j =125c t j =125c 0 100 200 300 400 500 600 00.511.522.53 v f (v) i f (a) hard switching zcs zvs 0 5 10 15 20 0 100 200 300 400 i c (a) fmax, operating frequency (khz) v ce =900v d=50% r g =4.7 ? t j =125c t c =75c operating frequency vs collector current maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) diode microsemi reserves the right to change, without notice, the specifications and info rmation contained herein
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